Are rectifiers and diodes the same?
Release time:
Jul 25,2024
Rectifiers, also known as diodes, generally carry a large amount of current. By utilizing the unidirectional conductivity of diodes, alternating alternating current can be converted into pulsating direct current in a single direction. There are high-power rectifier tubes and low-power rectifier tubes. Voltage resistance and frequency vary. In principle, the DC output obtained from the input AC is rectified. The output current greater than 100mA is usually referred to as rectification, with the magnitude of the rectified current (100mA) as the boundary. Surface junction type, operating frequency less than KHz, with a maximum reverse voltage ranging from 25 volts to 3000 volts divided into 22 levels A to X. The classification is as follows: ① 2CZ type silicon semiconductor rectifier diode, ② QL type silicon bridge rectifier, ③ 2CLG type used for high voltage silicon stack working frequency of nearly 100KHz in televisions.
The working principle of a diode:
A crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor, with space charge layers formed on both sides of its interface and a self built electric field established. When there is no external voltage, the diffusion current caused by the difference in carrier concentration on both sides of the p-n junction and the drift current caused by the self built electric field are equal and in an electric equilibrium state. When there is a forward voltage bias from the outside, the mutual suppression effect of the external electric field and the self built electric field increases the diffusion current of carriers, causing a forward current. When there is a reverse voltage bias from the outside, the external electric field and the self built electric field are further strengthened, forming a reverse saturation current I0 that is independent of the reverse bias voltage value within a certain range of reverse voltage. When the applied reverse voltage reaches a certain level, the electric field strength in the p-n junction space charge layer reaches a critical value, causing a doubling process of charge carriers and generating a large number of electron hole pairs, resulting in a significant reverse breakdown current, known as the diode breakdown phenomenon.
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